MOVPE growth of long wavelength AlGaAsSb∕InP Bragg mirrors
Résumé
Monolithic Distributed Bragg reflectors (DBRs) consisting of AlGaAsSb/InP quarterwave multilayer were grown by Metal-Organic Vapor-Phase Epitaxy (MOVPE) on InP substrates. The quality of antimonide MOVPE grown material has been optimized to achieve highly reflective, defect-free, DBR stacks. With 21 AlGaAsSb/InP periods, reflectivity up to 97% at 1.59µm was measured.
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