Sharp interface in epitaxial graphene layers on 3C-SiC(100)/Si(100) wafers - Université Paris Cité Accéder directement au contenu
Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2011

Sharp interface in epitaxial graphene layers on 3C-SiC(100)/Si(100) wafers

Résumé

Graphene ranks highly as a promising material for future nanoelectronic devices because of its exceptional electron-transport properties. It appears as a material of choice for high-frequency applications. We report the growth and structure of epitaxial graphene layers on 3C-SiC(100)/Si(100) wafers using low-energy electron microscopy. Selective-area low-energy electron diffraction highlights the presence of two graphene domains, rotated by ±15◦ with respect to the SiC lattice. Micro-Raman spectroscopy demonstrates the characteristic signature of few layer graphene on the SiC. X-ray photoemission spectroscopy evidences a sharp interface between graphene and 3C-SiC(100). It appears that epitaxial graphene layers obtained on 3C-SiC(100)/Si(100) have properties similar to those obtained using classical 6H or 4H-SiC substrates with the advantage of being compatible with the current Si processing technology
Fichier non déposé

Dates et versions

hal-00644391 , version 1 (24-11-2011)

Identifiants

Citer

A. Ouerghi, M. Ridene, A. Balan, R. Belkhou, A. Barbier, et al.. Sharp interface in epitaxial graphene layers on 3C-SiC(100)/Si(100) wafers. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83, pp.205429. ⟨10.1103/PhysRevB.83.205429⟩. ⟨hal-00644391⟩
81 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More