High performance of solution-processed SnO 2 thin-film transistors by promotion of photo-exposure time-dependent carrier transport during the pre-annealing stage - Université Paris Cité Access content directly
Journal Articles Semiconductor Science and Technology Year : 2020

High performance of solution-processed SnO 2 thin-film transistors by promotion of photo-exposure time-dependent carrier transport during the pre-annealing stage

Jun-Ik Park
  • Function : Author
Do-Kyung Kim
  • Function : Author
Hyunjae Lee
  • Function : Author
Jaewon Jang
  • Function : Author
Jihwan Park
  • Function : Author
Hyeok Kim
In Man Kang
  • Function : Author
Jin-Hyuk Bae
  • Function : Author
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hal-03007484 , version 1 (30-11-2021)

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Jun-Ik Park, Do-Kyung Kim, Hyunjae Lee, Jaewon Jang, Jihwan Park, et al.. High performance of solution-processed SnO 2 thin-film transistors by promotion of photo-exposure time-dependent carrier transport during the pre-annealing stage. Semiconductor Science and Technology, 2020, Jun-Ik Park et al 2020 Semicond. Sci. Technol. 35 065019, 35 (6), pp.065019. ⟨10.1088/1361-6641/ab8537⟩. ⟨hal-03007484⟩
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