Organic planar diode with Cu electrode via modification of the metal surface by SAM of fluorobiphenyl based thiol - Université Paris Cité Accéder directement au contenu
Article Dans Une Revue Applied Surface Science Année : 2021

Organic planar diode with Cu electrode via modification of the metal surface by SAM of fluorobiphenyl based thiol

Résumé

The surface of a Cu electrode is modified by the combination of preliminary oxidative treatment and grafting of a bifunctional self-assembled monolayer based on fluorobiphenylthiol (FBPS) or biphenylthiol (BPS). In these conditions, a dinaphtho [2, 3-b: 2′,3′-f] thieno [3,2-b] thiophene (DNTT)-based diode exhibits high mobility (0.35 cm 2 .V-1 .s-1) due to the formation of organized assembly of FBPS on the oxide copper that has been partially reduced in Cu 2 O; this organization controls that of the semiconductor film. On the other hand, the same treatment of Cu electrode with BPS molecules does not function, due to the disorganization of both the BPS SAM and the DNTT film. These results suggest that a monolayer of dipolar-oriented molecules lowers the injection barrier; steers the semiconductor organization and thereby enhances the performance of the derived electronic component.
Fichier principal
Vignette du fichier
Manuscript biswas diode DNTT_SAM_R1 pl.pdf (6.92 Mo) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-03455753 , version 1 (29-11-2021)

Identifiants

Citer

Swarup Biswas, Philippe Decorse, Hyeok Kim, Philippe Lang. Organic planar diode with Cu electrode via modification of the metal surface by SAM of fluorobiphenyl based thiol. Applied Surface Science, 2021, 558, pp.149794. ⟨10.1016/j.apsusc.2021.149794⟩. ⟨hal-03455753⟩
113 Consultations
129 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More